Characterizing Hidden Defect Trap States in a Semiconductor

A semiconductor's crystal quality depends on defect trap states buried within it, and these traps' energy levels and concentration need to be identified without direct visual access.

References

• Hall, R.N., Racette, J.H. "Electron-Hole Recombination in Germanium." Journal of Applied Physics 32, no. 12 (1961): 2287–2292.