Capacitance-Voltage (C-V) Profiling

Maps a semiconductor junction's doping profile and depletion width by measuring capacitance as a function of applied voltage.

References

• Kennedy, D.P., Murley, P.C., Kleinfelder, W. "On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique." IBM Journal of Research and Development 12, no. 5 (1968): 399–409.