What's the doping profile or junction capacitance in my device?

Mapping how dopant concentration varies with depth beneath a semiconductor junction.

References

• Kennedy, D.P., Murley, P.C., Kleinfelder, W. "On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique." IBM Journal of Research and Development 12, no. 5 (1968): 399–409.